Patent · US Active

Method for manufacturing a substrate comprising a relaxed InGaN layer

US11735693B2 · kind B2 · utility

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15Claims

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Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Carole Pernel · St-Estève, FR
Amélie Dussaigne · Bizonnes, FR

Key dates

Filing date	Dec 16, 2020
Grant date	Aug 22, 2023
Priority date	—
Expiry date	May 18, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/812
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for manufacturing a substrate comprising the following steps of: providing a stack comprising an initial substrate, a GaN layer, a doped InGaN layer and an unintentionally doped InGaN layer, transferring the doped InGaN layer and the unintentionally doped InGaN layer to an anodising support, so as to form a second stack, dipping the second stack and the counter-electrode into an electrolyte solution, and applying a voltage or current between the doped InGaN layer and a counter electrode, to porosify the doped InGaN layer, and relaxing the unintentionally doped InGaN layer, transferring the doped InGaN layer and the unintentionally doped InGaN layer to a support of interest, forming an InGaN layer by epitaxy on the unintentionally doped InGaN layer, whereby a relaxed epitaxially grown InGaN layer is obtained.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.