Semiconductor laser and method of production for optoelectronic semiconductor parts

US11735887B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Jörg Erich Sorg · Regensburg, DE
• Harald König · Bernhardswald, DE
• Alfred Lell · Maxhütte-Haidhof, DE
• Florian Peskoller · Ingolstadt, DE
• Karsten Auen · Regensburg, DE
• Roland Schulz · Portland, US
• Herbert Brunner · Sinzing, DE
• Frank Singer · Regenstauf, DE
• Roland Hüttinger · Kaufering, DE

Key dates

• Filing date: Oct 8, 2018
• Grant date: Aug 22, 2023
• Expiry date: Jan 1, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/0267
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

In one embodiment the semiconductor laser (1) comprises a carrier (2) and an edge-emitting laser diode (3) which is mounted on the carrier (2) and which comprises an active zone (33) for generating a laser radiation (L) and a facet (30) with a radiation exit region (31). The semiconductor laser (1) further comprises a protective cover (4), preferably a lens for collimation of the laser radiation (L). The protective cover (4) is fastened to the facet (30) and to a side surface (20) of the carrier (2) by means of an adhesive (5). A mean distance between a light entrance side (41) of the protective cover (4) and the facet (30) is at most 60 μm. The semiconductor laser (1) is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.