Magnetic memory devices and methods of fabrication

US11737368B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Daniel G. Ouellette · Portland, US
• Christopher J. Wiegand · Portland, US
• Justin S. Brockman · Portland, US
• Tofizur Rahman · Portland, US
• Oleg Golonzka · Beaverton, US
• Angeline Smith · Hillsboro, US
• Andrew L. Smith · Needham, US
• James Pellegren · Portland, US
• Michael Robinson · Beaverton, US
• Huiying Liu · Qinhuangdao City, CN

Key dates

• Filing date: Mar 27, 2019
• Grant date: Aug 22, 2023
• Expiry date: Dec 21, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/80

Abstract

A memory device includes a first electrode, a conductive layer including iridium above the first electrode and a magnetic junction directly on the conductive layer. The magnetic junction further includes a pinning structure above the conductive layer, a fixed magnet above the pinning structure, a tunnel barrier on the fixed magnet, a free magnet on the tunnel barrier layer and a second electrode above the free magnet. The conductive layer including iridium and the pinning structure including iridium provide switching efficiency.