Device including elements for compensating for local variability of electrostatic potential
US11737375B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 11, 2022 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Apr 11, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N69/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A device including a semiconductor layer comprising first regions delimited by second regions and third regions; first electrostatic control gates including first conductive portions extending parallel to each other, in vertical alignment with the second regions; second electrostatic control gates including second conductive portions extending parallel to each other, in vertical alignment with the third regions; wherein each first gate includes an electrostatic control voltage adjustment element forming two impedances connected in series, one end of one of the impedances being coupled to the first conductive portion of the first gate and one end of the other of the impedances being coupled to a third conductive portion applying an adjustment electric potential to the second impedance, and wherein the value of at least one of the impedances is adjustable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.