Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth
US11739437B2 · kind B2 · utility
1Cited by
2References
17Claims
0Family size
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Key dates
| Filing date | Dec 11, 2019 |
| Grant date | Aug 29, 2023 |
| Priority date | — |
| Expiry date | Mar 22, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for forming single crystal silicon ingots with improved resistivity control are disclosed. The methods involve growth of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The sample rod is cropped to form a center slab. The resistivity of the center slab may be measured directly such as by a four-point probe. The sample rod or optionally the center slab may be annealed in a thermal donor kill cycle prior to measuring the resistivity, and the annealed rod or slab is irradiated with light in order to enhance the relaxation rate and enable more rapid resistivity measurement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.