Control method and plasma processing apparatus
US11742182B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2022 |
| Grant date | Aug 29, 2023 |
| Priority date | — |
| Expiry date | Mar 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.