Ferroelectric material, MEMS component comprising a ferroelectric material, MEMS device comprising a first MEMS component, method of producing a MEMS component, and method of producing a CMOS-compatible MEMS component

US11744158B2 · kind B2 · utility

Assignees

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE
• Christian-Albrechts-Universitaet zu Kiel · DE

Inventors

• Bernhard Wagner · Fellbach, DE
• Fabian LOFINK · Itzehoe, DE
• Dirk KADEN · Elmshorn, DE
• Simon Fichtner · Itzehoe, DE

Key dates

• Filing date: Sep 10, 2020
• Grant date: Aug 29, 2023
• Expiry date: Nov 20, 2041

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81B2201/03
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A ferroelectric material includes a mixed crystal having AlN and at least one nitride of a transition metal. The proportion of the nitride of the transition metal is selected such that a direction of an initial or spontaneous polarity of the ferroelectric material is switchable by applying a switchover voltage. The switchover voltage is below a breakdown voltage of the ferroelectric material.