Semiconductor apparatus including a phase change material layer having a first and a second chalcogen layer
US11744167B2 · kind B2 · utility
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5References
20Claims
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Key dates
| Filing date | May 26, 2021 |
| Grant date | Aug 29, 2023 |
| Priority date | — |
| Expiry date | Jul 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8413
Abstract
Semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend side by side in a direction parallel to the substrate. The phase change material layer may have a superlattice-like structure. The phase change material layer may be arranged along a recess portion that is formed by the first insulating layer, the second insulating layer, and the selection device layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.