Real time photoresist outgassing control system and method
US11749500B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2022 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Jan 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31705
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system and method for controlling an amount of outgassing caused by implanting ions into a photoresist disposed on a workpiece. The amount of outgassing is based on the species being implanted, the type of photoresist, the energy of the implant, and the amount of dose that has already been implanted, among other effects. By controlling the effective beam current, the amount of outgassing may be maintained below a predetermined threshold. By developing and utilizing the relationship between effective beam current, dose completed and rate of outgassing, the effective beam current may be controlled more precisely to implant the workpiece in the most efficient manner while remaining below the predetermined outgassing threshold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.