Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films
US11749527B2 · kind B2 · utility
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Key dates
| Filing date | Jul 25, 2022 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Jul 25, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8271
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.