Patent · US Active

Thermal structures adapted to electronic device heights in integrated circuit (IC) packages

US11749579B2 · kind B2 · utility

0Cited by
1References
22Claims
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Assignee

Inventors

Key dates

Filing dateMar 1, 2021
Grant dateSep 5, 2023
Priority date
Expiry dateJun 16, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/19105
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An IC package includes a heat-generating device and an electrical device on a surface of a substrate, a mold compound disposed on the electrical device, and a thermal structure disposed on the heat-generating device, without the mold compound, to improve heat dissipation. In an example, the thermal structure includes a thermal interface material (TIM) layer and a heat sink. In the example, the TIM layer extends from the heat-generating device to a height equal to or less than the mold compound and the heat sink includes a planar exterior surface above the heat-generating device and the electrical device. In an example, a first heat sink portion of the heat sink on the heat-generating device may be a different thickness than a second heat sink portion of the heat sink on the electrical device. The thermal structure reduces a thermal resistance between the heat-generating device and the heat sink.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.