Fabrication process and structure of fine pitch traces for a solid state diffusion bond on flip chip interconnect
US11749595B2 · kind B2 · utility
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13References
20Claims
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Key dates
| Filing date | May 10, 2021 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Dec 15, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to produce a semiconductor package or system-on-flex package comprising bonding structures for connecting IC/chips to fine pitch circuitry using a solid state diffusion bonding is disclosed. A plurality of traces is formed on a substrate, each respective trace comprising at least four different conductive materials having different melting points and plastic deformation properties, which are optimized for both diffusion bonding of chips and soldering of passives components.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.