Patent · US Active

Process for manufacturing a relaxed GaN/InGaN structure

US11749779B2 · kind B2 · utility

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14Claims

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Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Carole Pernel · St-Estève, FR
Amélie Dussaigne · Bizonnes, FR

Key dates

Filing date	Dec 16, 2020
Grant date	Sep 5, 2023
Priority date	—
Expiry date	Apr 3, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10H29/142
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process comprising the following steps of: a) providing a device comprising: a GaN/InGaN structure comprising an electrically conductive doped GaN layer locally covered with InGaN mesas comprising a doped InGaN layer and an undoped or weakly doped InGaN layer, an electrically insulating layer covering the electrically conductive doped GaN layer between the mesas, b) connecting the electrically conductive doped GaN layer and a counter-electrode (500) to a voltage or current generator, c) dipping the device and the counter-electrode into an electrolyte solution, d) applying a voltage or current between the electrically conductive doped GaN layer and the second electrode to porosify the doped InGaN layer, e) forming an InGaN layer by epitaxy on the InGaN mesas, whereby a relaxed epitaxially grown InGaN layer is obtained.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.