Embedded memory pillar

US11751492B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Dexin Kong · Guilderland, US
• Ashim Dutta · Clifton Park, US
• Ekmini Anuja De Silva · Slingerlands, US
• Daniel Schmidt · Niskayuna, US

Key dates

• Filing date: Sep 24, 2021
• Grant date: Sep 5, 2023
• Expiry date: Apr 22, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/841

Abstract

A memory device is provided. The memory device includes a memory stack on a first dielectric layer, and a sidewall spacer on the memory stack. The memory device further includes a conductive cap on the sidewall spacer and the memory stack and an upper metal line on the conductive cap and the sidewall spacer, wherein the upper metal line wraps around the conductive cap, sidewall spacer, and memory stack.