SiO2 thin film produced by atomic layer deposition at room temperature
US11753718B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2021 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Jun 30, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45527
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for atomic layer deposition for the deposition of silicon oxide on a substrate, performed at room temperature, involving at least three precursors, being silicon tetrachloride, water and one Lewis base agent, being in various instances ammonia. The process comprises the steps of exposing on the substrate during an exposure time (a) the one Lewis base agent, (b) the silicon tetrachloride, and (c) the water. The process is remarkable in that at least one step of purge with nitrogen gas is performed after each of the steps (a), (b) and (c) during a purge time. Additionally, a film of silicon oxide which is remarkable in that it comprises a low level of chlorine contaminant and a significant degree of porosity with pores, the pores being in various instances micropores, mesopores or nanopores.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.