Inspection apparatus for inspecting semiconductor devices using charged particles
US11754517B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2021 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Feb 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An inspection apparatus and a method of inspecting a semiconductor device are disclosed. The inspection apparatus includes a stage on which a semiconductor device is positioned, a first light source irradiating a high-frequency light onto an inspection area of the semiconductor device to reduce a potential barrier of a PN junction in the semiconductor device, a beam scanner arranged over the semiconductor device and irradiating a charged particle beam onto the inspection area of the semiconductor device to generate secondary electrons, and a defect detector generating a detection image corresponding to the inspection area and detecting, based on a voltage contrast between a reference image and a plurality of detection images, a defect image indicating a defect in the semiconductor device from among the plurality of detection images.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.