Photoresist pattern trimming compositions and pattern formation methods
US11754927B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2020 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Apr 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the aromatic sulfonic acid is of general formula (I): wherein: Ar1 represents an aromatic group; R1 independently represents a halogen atom, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted heteroalkyl, substituted or unsubstituted carbocyclic aryl, substituted or unsubstituted heterocyclic aryl, substituted or unsubstituted alkoxy, or a combination thereof, wherein adjacent R1 groups together optionally form a fused ring structure with Ar1; a represents an integer of 2 or more; and b represents an integer of 1 or more, provided that a+b is at least 3 and is not greater than the total number of available aromatic carbon atoms of Ar1, and two or more of R1 are independently a fluorine atom or a fluoroalkyl group bonded directly to an aromatic ring carbon atom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.