Obtaining threshold voltage measurements for memory cells based on a user read mode
US11756630B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2021 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Jan 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatuses and techniques are described for obtaining a threshold voltage distribution for a set of memory cells based on a user read mode. The user read mode can be based on various factors including a coding of a page and an increasing or decreasing order of the read voltages. The read process for the Vth distribution is made to mimic the read mode which is used when the memory device is in the hands of the end user. This results in a Vth distribution which reflects the user's experience to facilitate troubleshooting. In some cases, one or more dummy read operations are performed, where the read result is discarded, prior to a read operation which is used to build the Vth distribution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.