Semiconductor structure with oxidized ruthenium
US11756825B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | Nov 20, 2020 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Nov 10, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53209
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure is provided, including a conductive layer, a dielectric layer over the conductive layer, a ruthenium material in the dielectric layer and in contact with a portion of the conductive layer, and a ruthenium oxide material in the dielectric layer laterally between the ruthenium material and the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.