Oversized via as through-substrate-via (TSV) stop layer
US11756862B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2022 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Mar 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a standard contact disposed within a dielectric structure on a substrate. An oversized contact is disposed within the dielectric structure and is laterally separated from the standard contact. The oversized contact has a larger width than the standard contact. An interconnect wire vertically contacts the oversized contact. A through-substrate via (TSV) vertically extends through the substrate. The TSV physically and vertically contacts the oversized contact or the interconnect wire. The TSV vertically overlaps the oversized contact or the interconnect wire over a non-zero distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.