Semiconductor device and method of forming a slot in EMI shielding with improved removal depth
US11756897B2 · kind B2 · utility
1Cited by
4References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 2021 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Jul 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is formed by providing a semiconductor package including a shielding layer and forming a slot in the shielding layer using a laser. The laser is turned on and exposed to the shielding layer with a center of the laser disposed over a first point of the shielding layer. The laser is moved in a loop while the laser remains on and exposed to the shielding layer. Exposure of the laser to the shielding layer is stopped when the center of the laser is disposed over a second point of the shielding layer. A distance between the first point and the second point is approximately equal to a radius of the laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.