Bonding wafer structure and method of manufacturing the same
US11757003B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2021 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Sep 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonding wafer structure includes a support substrate, a bonding layer, and a silicon carbide (SiC) layer. The bonding layer is formed on a surface of the support substrate, and the SiC layer is bonded onto the bonding layer, in which a carbon surface of the SiC layer is in direct contact with the bonding layer. The SiC layer has a basal plane dislocation (BPD) of 1,000 ea/cm2 to 20,000 ea/cm2, a total thickness variation (TTV) greater than that of the support substrate, and a diameter equal to or less than that of the support substrate. The bonding wafer structure has a TTV of less than 10 μm, a bow of less than 30 μm, and a warp of less than 60 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.