Semiconductor device with non-volatile memory cell and manufacturing method thereof

US11757011B2 · kind B2 · utility

Assignee

• KEY FOUNDRY CO., LTD. · KR

Inventors

• Min Kuck Cho · Cheongju-si, KR
• Jae Hoon Kim · Seoul, KR
• Seung-Hoon Lee · Yongin-si, KR

Key dates

• Filing date: Nov 18, 2021
• Grant date: Sep 12, 2023
• Expiry date: Nov 18, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6892

Abstract

A manufacturing method of a semiconductor device, includes providing a substrate; forming a stacked gate, including a floating gate and a control gate, on the substrate; forming a stacked gate by a deposition of a select gate conductive layer on the stacked gate; forming a trench in the stacked gate by etching the stacked gate to separate a first select gate pattern and a second select gate pattern; and forming a first select gate, a second select gate, a first transistor, and a second transistor simultaneously through an etch-back process of the stacked gate.