High voltage device

US11757034B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Hung-Sen Wang · Tainan, TW
• Yun-Ta Tsai · Santa Clara, US
• Ruey-Hsin Liu · Baoshan, TW
• Shih-Fen Huang · Zhubei City, TW
• Ho-Chun Liou · Baoshan, TW

Key dates

• Filing date: Apr 27, 2022
• Grant date: Sep 12, 2023
• Expiry date: Apr 27, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/109

Abstract

A high-voltage device includes a first frame-like isolation and a second frame-like isolation separated from each other, a first frame-like gate structure covering the first frame-like isolation, a second frame-like gate structure covering the second frame-like isolation, a first drain region enclosed by the first frame-like isolation, a second drain region enclosed by the second frame-like isolation, a first frame-like source region surrounding the first frame-like gate structure, a second frame-like source region surrounding the second frame-like gate structure, a first doped region surrounding the first and second frame-like gate structures, and a second doped region disposed between the first and second frame-like gate structures. The first and second drain regions, and the first and second frame-like source regions include a first conductivity type. The first and the second doped region include a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other.