Method for producing gallium oxide Schottky barrier diode with negative beveled angle terminal

US11757048B1 · kind B1 · utility

Assignee

• THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION · CN

Inventors

• Yuangang Wang · Nanhu, CN
• Yuanjie Lv · Shijiazhuang, CN
• Shaobo Dun · Shijiazhuang, CN
• Tingting HAN · Shijiazhuang, CN
• Hongyu Liu · Beijing, CN
• Zhihong Feng · Shijiazhuang, CN

Key dates

• Filing date: Apr 26, 2023
• Grant date: Sep 12, 2023
• Expiry date: Apr 26, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D99/00
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A gallium oxide Schottky barrier diode with negative beveled angle terminal and a production method thereof are provided. The production method includes four steps. In the first step, a photoresist layer with a preset pattern is formed on a gallium oxide epitaxial layer, where the gallium oxide epitaxial layer is formed on an upper surface of a gallium oxide substrate. In the second step, first electrode layer is formed on the gallium oxide epitaxial layer. In the third step, the gallium oxide substrate is rotated and the gallium oxide epitaxial layer is etched. In the fourth step, a second electrode layer is formed on the lower surface of the gallium oxide substrate.