Resist composition, method of forming resist pattern, and acid diffusion-controlling agent
US11762288B2 · kind B2 · utility
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Key dates
| Filing date | Dec 10, 2020 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Mar 12, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0397
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist composition that generates an acid upon exposure and whose solubility in a developing solution is changed by action of an acid. The resist composition includes a base material component whose solubility in a developing solution is changed by action of an acid, and a compound represented by General Formula (d0) in which Rd01 represents a monovalent organic group, Rd02 represents a single bond or a divalent linking group, m represents an integer of 1 or greater, and Mm+ represents an m-valent organic cation
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.