Patent · US Active

Energy recovery in filamentary resistive memories

US11763884B2 · kind B2 · utility

0Cited by
2References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 1, 2020
Grant dateSep 19, 2023
Priority date
Expiry dateDec 1, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2213/79
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory comprising: a resistive-switching element having first and second electrodes separated by a layer of insulator; an energy storage component or load coupled to the resistive-switching element via a first switch; and a control circuit configured: to program the resistive-switching element to have a set state, wherein, in the set state, a filament forms a conducting path between the first and second electrodes; and, following a dissolution of the filament, to recover electrical energy, generated by the dissolution of the filament, from one of the first and second electrodes by activating the first switch.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.