Reduced-voltage operation of a memory device
US11763897B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2022 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Jul 13, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and devices for reduced-voltage operation of a memory device are described. A memory device may operate in different operational modes based on a value of a supply voltage fir the memory device. For example, when the value of the supply voltage exceeds both a first threshold voltage and a second threshold voltage, the memory device may be operated in a normal operation mode. When the value of the supply voltage is between the first threshold voltage and the second threshold voltage, the memory device may be operated in a low voltage operation mode, which may be a reduced performance mode relative to the normal operation mode. When the value of the supply voltage is below the second threshold voltage, the memory device may be deactivated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.