Buffer layers and interlayers that promote BiSbx (012) alloy orientation for SOT and MRAM devices
US11763973B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2021 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Aug 13, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/0024
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a buffer layer, a bismuth antimony (BiSb) layer having a (012) orientation disposed on the buffer layer, and an interlayer disposed on the BiSb layer. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer each comprise at least one of a covalently bonded amorphous material, a tetragonal (001) material, a tetragonal (110) material, a body-centered cubic (bcc) (100) material, a face-centered cubic (fcc) (100) material, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, or an amorphous metallic material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the BiSb layer and enhance uniformity of the BiSb layer while further promoting the (012) orientation of the BiSb layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.