Method for manufacturing back surface incident type semiconductor photo detection element
US11764236B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2022 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Jul 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/103
Abstract
A semiconductor substrate including a first main surface and a second main surface opposing each other is provided. The semiconductor substrate includes a first semiconductor region of a first conductivity type. The semiconductor substrate includes a plurality of planned regions where a plurality of second semiconductor regions of a second conductivity type forming pn junctions with the first semiconductor region are going to be formed, in a side of the second main surface. A textured region is formed on surfaces included in the plurality of planned regions, in the second main surface. The plurality of second semiconductor regions are formed in the plurality of planned regions after forming the textured region. The first main surface is a light incident surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.