Use of buffer members during growth of single crystal silicon ingots
US11767610B2 · kind B2 · utility
3Cited by
1References
16Claims
0Family size
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Key dates
| Filing date | Dec 16, 2021 |
| Grant date | Sep 26, 2023 |
| Priority date | — |
| Expiry date | Dec 16, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed. A batch of buffer members (e.g., quartz cullets) is added to an outer melt zone of the crucible assembly before the main body of the ingot is grown. In some embodiments, the ratio of the mass M of the batch of buffer members added to the melt to the time between adding the batch of buffer members to the melt and when the ingot main body begins to grow is controlled such that the ratio of M/T is greater than a threshold M/T.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.