Methods for producing a monocrystalline ingot by horizontal magnetic field Czochralski
US11767611B2 · kind B2 · utility
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3References
17Claims
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Key dates
| Filing date | May 25, 2021 |
| Grant date | Sep 26, 2023 |
| Priority date | — |
| Expiry date | Oct 5, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B30/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for producing monocrystalline silicon ingots by horizontal magnetic field Czochralski are disclosed. During growth of the neck and/or growth of at least a portion of the crown, a magnetic field is not applied to the neck and/or crown or a relatively weak magnetic field of 1500 gauss or less is applied. A horizontal magnetic field (e.g., greater than 1500 gauss) is applied during growth of the ingot main body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.