Group III nitride single crystal substrate
US11767612B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Sep 21, 2018 |
| Grant date | Sep 26, 2023 |
| Priority date | — |
| Expiry date | May 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A group III nitride single crystal substrate including a main surface, the main surface including: a center; a periphery; an outer region whose distance from the center is greater than 30% of a first distance, the first distance being a distance from the center to the periphery; and an inner region whose distance from the center is no more than 30% of the first distance, wherein a ratio (νA−νB)/νB is within the range of ±0.1%, wherein νA is a minimum value of peak wave numbers of micro-Raman spectra in the inner region; and νB is an average value of peak wave numbers of micro-Raman spectra in the outer region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.