Bipolar junction transistors including wrap-around emitter and collector contacts
US11769806B2 · kind B2 · utility
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5References
20Claims
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Key dates
| Filing date | Nov 12, 2021 |
| Grant date | Sep 26, 2023 |
| Priority date | — |
| Expiry date | Jan 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a first terminal having a first raised semiconductor layer having a top surface and a side surface, a second terminal having a second raised semiconductor layer, and a base layer positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal. The structure further includes a contact positioned to overlap with the top surface and the side surface of the first raised semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.