Inventor · Rexford, NY, US

Hong Yu

44Patents
2h-index
47Co-inventors
57Inventor score

Filing activity: Dec 12, 2003 → Sep 4, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US10192746B1 STI inner spacer to mitigate SDB loading Electricity 4 Active
US7006178B2 One drop fill LCD panel having light-shielding pattern with first and second metal patterns Physics 3 Expired
US11127842B2 Single fin structures Electricity 2 Active
US11037821B2 Multiple patterning with self-alignment provided by spacers Electricity 2 Active
US11888031B2 Fin-based lateral bipolar junction transistor and method Electricity 1 Active
US10971583B2 Gate cut isolation including air gap, integrated circuit including same and related method Electricity 1 Active
US11843044B2 Bipolar transistor structure on semiconductor fin and methods to form same Electricity 1 Active
US11705508B2 Single fin structures Electricity 1 Active
US11101364B2 Field-effect transistors with diffusion blocking spacer sections Electricity 0 Active
US11205648B2 IC structure with single active region having different doping profile than set of active regions Electricity 0 Active
US11264504B2 Active and dummy fin structures Electricity 0 Active
US11749727B2 Bipolar junction transistors with duplicated terminals Electricity 0 Active
US11810951B2 Semiconductor-on-insulator field effect transistor with performance-enhancing source/drain shapes and/or materials Electricity 0 Active
US12389627B2 Silicon germanium fins and integration methods Electricity 0 Active
US12433014B2 Structure having different gate dielectric widths in different regions of substrate Electricity 0 Active
US12389616B2 Transistors with multiple silicide layers Electricity 0 Active
US11804541B2 Bipolar transistor structure with emitter/collector contact to doped semiconductor well and related methods Electricity 0 Active
US12261215B2 Fin on silicon-on-insulator Electricity 0 Active
US11923417B2 Lateral bipolar junction transistors with a back-gate Electricity 0 Active
US11315835B2 Methods of forming an IC product comprising transistor devices with different threshold voltage levels Electricity 0 Active
US11769806B2 Bipolar junction transistors including wrap-around emitter and collector contacts Electricity 0 Active
US12349374B2 Lateral bipolar transistors Electricity 0 Active
US11195761B2 IC structure with short channel gate structure having shorter gate height than long channel gate structure Electricity 0 Active
US11037937B2 SRAM bit cells formed with dummy structures Electricity 0 Active
US11004953B2 Mask-free methods of forming structures in a semiconductor device Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.