Conductive alloy layer in magnetic memory devices and methods of fabrication
US11770979B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2018 |
| Grant date | Sep 26, 2023 |
| Priority date | — |
| Expiry date | Apr 28, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A memory device includes a bottom electrode, a conductive layer such as an alloy including ruthenium and tungsten above the bottom electrode and a perpendicular magnetic tunnel junction (pMTJ) on the conductive layer. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet on the tunnel barrier. The memory device further includes a synthetic antiferromagnetic (SAF) structure that is ferromagnetically coupled with the fixed magnet to pin a magnetization of the fixed magnet. The conductive layer has a crystal texture which promotes high quality FCC <111> crystal texture in the SAF structure and improves perpendicular magnetic anisotropy of the fixed magnet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.