Electronic device
US11770980B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2020 |
| Grant date | Sep 26, 2023 |
| Priority date | — |
| Expiry date | Aug 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electronic device may include a semiconductor memory, and the semiconductor memory may include a multilayer synthetic anti-ferromagnetic (Multi SAF) structure including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the spacer layer may include n non-magnetic layers and n−1 magnetic layers that are disposed such that each of the n non-magnetic layers and each of the n−1 magnetic layers are alternately stacked, wherein n indicates an odd number equal to or greater than 3, wherein the n−1 magnetic layers and n non-magnetic layers may be configured to effectuate an antiferromagnetic exchange coupling with at least one of the first ferromagnetic layer and the second ferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.