Method and circuit for sensing MOSFET temperature for load switch application
US11774296B2 · kind B2 · utility
0Cited by
2References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 11, 2021 |
| Grant date | Oct 3, 2023 |
| Priority date | — |
| Expiry date | Feb 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02H9/04
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and device for temperature monitoring of a power transistor formed in a semiconductor die comprising are disclosed. A side of a temperature-sensing resistor disposed in the semiconductor die is coupled to a voltage input side of the power transistor. A controller coupled to a second side of the temperature-sensing resistor is configured to detect a voltage across the resistor and trigger a temperature related corrective action using the detected voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.