Inventor · Chanhassen, MN, US

Xiaobin Wang

173Patents
17h-index
107Co-inventors
89Inventor score

Filing activity: Jun 30, 1998 → May 18, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US7898838B2 Resistive sense memory calibration for self-reference read method Physics 89 Active
US8299494B2 Nanotube semiconductor devices Electricity 60 Active
US7308352B2 Enhanced braking system and method Emerging Cross-Sectional Technologies 43 Expired
US9070855B2 Magnetic random access memory having perpendicular enhancement layer Electricity 37 Active
US7910486B2 Method for forming nanotube semiconductor devices Electricity 37 Active
US7034476B2 System and method for providing automatic power control and torque boost Emerging Cross-Sectional Technologies 32 Expired
US7852665B2 Memory cell with proportional current self-reference sensing Physics 28 Active
US6498210B1 Silylated polyurethanes for adhesives and sealants with improved mechanical properties Emerging Cross-Sectional Technologies 26 Expired
US9166143B1 Magnetic random access memory with multiple free layers Physics 25 Active
USD921502S1 Temperature probe General 22 Active
US8493556B2 Distributed brillouin sensing systems and methods using few-mode sensing optical fiber Physics 21 Active
US6048579A Primer for improving the bonding of adhesives to nonporous substrates Chemistry; Metallurgy 21 Expired
US7804709B2 Diode assisted switching spin-transfer torque memory unit Physics 20 Active
US6008305A Primer for improving the bonding of adhesives to nonporous substrates Chemistry; Metallurgy 20 Expired
US7800938B2 Oscillating current assisted spin torque magnetic memory Physics 20 Active
US8394702B2 Method for making dual gate oxide trench MOSFET with channel stop using three or four masks process Electricity 20 Active
US6124387A Fast-cure silylated polymer adhesive Emerging Cross-Sectional Technologies 18 Expired
US8907416B2 Dual gate oxide trench MOSFET with channel stop trench Electricity 16 Active
US8203899B2 Memory cell with proportional current self-reference sensing Physics 15 Active
US7846564B2 Perpendicular magnetic recording media with magnetic anisotropy/coercivity gradient and local exchange coupling Emerging Cross-Sectional Technologies 15 Active
US7826260B2 Spin-transfer torque memory self-reference read and write assist methods Physics 15 Active
US7936592B2 Non-volatile memory cell with precessional switching Electricity 14 Active
US8495118B2 Tunable random bit generator with magnetic tunnel junction Physics 13 Active
US8508973B2 Method of switching out-of-plane magnetic tunnel junction cells Electricity 13 Active
US6885930B2 System and method for slip slide control Performing Operations; Transporting 13 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.