Extreme ultraviolet mask and method of manufacturing the same
US11774844B2 · kind B2 · utility
1Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2022 |
| Grant date | Oct 3, 2023 |
| Priority date | — |
| Expiry date | Mar 14, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2004
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.