Patent · US Active

Memory system with a predictable read latency from media with a long write latency

US11775442B2 · kind B2 · utility

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20Claims
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Key dates

Filing dateJan 25, 2022
Grant dateOct 3, 2023
Priority date
Expiry dateApr 23, 2042

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2029/0411
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Systems and methods related to a memory system with a predictable read latency from media with a long write latency are described. An example memory system includes an array of tiles configured to store data corresponding to a cache line associated with a host. The memory system further includes control logic configured to, in response to a write command from a host, initiate writing of a first cache line to a first tile in a first row of the tiles, a second cache line to a second tile in a second row of the tiles, a third cache line to a third tile in a third row of the tiles, and a fourth cache line in a fourth row of the tiles. The control logic is configured to, in response to a read command from the host, initiate reading of data stored in an entire row of tiles.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.