Process and device for low-temperature pressure sintering

US11776932B2 · kind B2 · utility

Assignee

• DANFOSS SILICON POWER GMBH · DE

Inventors

• Ronald Eisele · Surendorf, DE
• Holger Ulrich · Nortorf, DE

Key dates

• Filing date: Sep 21, 2015
• Grant date: Oct 3, 2023
• Expiry date: Mar 31, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H05K2203/1157
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.