Method of manufacturing integrated circuit device
US11776962B2 · kind B2 · utility
0Cited by
12References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2022 |
| Grant date | Oct 3, 2023 |
| Priority date | — |
| Expiry date | Apr 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
An integrated circuit device is provided. The integrated circuit device includes a fin-type active region that extends in a first direction on a substrate, a gate structure that intersects with the fin-type active region and extends in a second direction, perpendicular to the first direction, on the substrate, and a first contact structure that is disposed on the gate structure, and has a greater width at a top surface than a bottom surface thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.