Patent · US Active

Bypass circuitry to improve switching speed

US11777485B2 · kind B2 · utility

2Cited by
7References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 26, 2022
Grant dateOct 3, 2023
Priority date
Expiry dateApr 26, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03K17/04123
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

Methods and devices to improve the switching speed of radio frequency FET switch stacks are disclosed. The described methods and devices are based on bypassing drain-sources resistors when the FET switch stack is transitioning from an ON to an OFF state. Several implementations of the disclosed teachings are also presented.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.