Capcitor structure and method of forming thereof
US11778809B1 · kind B1 · utility
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13Claims
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Key dates
| Filing date | Apr 20, 2022 |
| Grant date | Oct 3, 2023 |
| Priority date | — |
| Expiry date | Apr 20, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
Abstract
A method of forming a capacitor structure includes following operations. A first electrode is formed. A hafnium-zirconium oxide (HZO) layer is formed over the first electrode under a first temperature. An interface dielectric layer is formed over the HZO layer under a second temperature greater than the first temperature. A second electrode is formed over the interface dielectric layer. The HZO layer and the interface dielectric layer are annealed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.