Apparatuses including band offset materials, and related systems
US11778824B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Jan 4, 2021 |
| Grant date | Oct 3, 2023 |
| Priority date | — |
| Expiry date | Mar 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a stack comprising an alternating sequence of dielectric structures and conductive structures, and a channel structure within an opening vertically extending through the stack and comprising a first semiconductor material having a first band gap. The semiconductor device also comprises a conductive plug structure within the opening and in direct contact with the channel region, and a band offset structure within the opening and in direct physical contact with the channel structure and the conductive plug structure. The band offset structure comprises a second semiconductor material having a second band gap different than the first band gap. The semiconductor device further comprises a conductive line structure electrically coupled to the conductive plug structure. A method of forming a semiconductor device and an electronic system are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.