Method for preparing indium phosphide crystal by utilizing indium-phosphorus mixture

US11781240B2 · kind B2 · utility

Assignee

• THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION · CN

Inventors

• Niefeng Sun · Laishui, CN
• Shujie Wang · Laishui, CN
• Yanlei SHI · Laishui, CN
• Huimin SHAO · Laishui, CN
• Lijie FU · Laishui, CN
• Xiaolan Li · Laishui, CN
• Yang Wang · Huangshan, CN
• Senfeng Xu · Laishui, CN
• Huisheng Liu · Laishui, CN
• Tongnian SUN · Laishui, CN

Key dates

• Filing date: Sep 10, 2020
• Grant date: Oct 10, 2023
• Expiry date: May 30, 2041

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The invention discloses a method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, belongs to the technical field of semiconductors, and comprises the steps of preparing an indium-phosphorus mixed ball, charging, maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball, melting a covering agent, feeding, synthesizing and crystal growing, which is synthesized by directly melting the proportioned indium-phosphorus mixed ball. Indium powder and phosphorus powder are uniformly mixed and pressed into spherical indium-phosphorus mixed particles, then the mixture of the indium-phosphorus mixed balls and the boron oxide powder is fed into a melt with a boron oxide covering agent, and crystal growth in situ is performed after synthesis. The method has the advantages of short reaction time, high efficiency and raw material saving, which can effectively reduce the risk of contamination of materials, saves procedures and reduces the material preparation cost.