Patent · US Active

Microsystem and method for making a microsystem

US11788895B2 · kind B2 · utility

0Cited by
4References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 17, 2020
Grant dateOct 17, 2023
Priority date
Expiry dateMar 2, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N30/883
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The invention relates to a microsystem (1) comprising a substrate (12), a bottom electrode (3) arranged on the substrate (12), a ferroelectric layer (4) arranged on the bottom electrode (3), a top electrode (5) arranged on the ferroelectric layer (4) and an isolation layer (6) that is electrically isolating, that is arranged on the top electrode (5), that extends from the top electrode (5) to the substrate (12) so that the isolation layer (6) covers the bottom electrode (3), the ferroelectric layer (4) and the substrate (12) in a region around the complete circumference of the bottom electrode (3), and the isolation layer (6) has the shape of a ring that confines in its centre a through hole (11) that is arranged in the region of the top electrode (5).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.