Patent · US Active

Selective reading of memory with improved accuracy

US11789796B2 · kind B2 · utility

0Cited by

19References

20Claims

0Family size

Assignee

Ovonyx Memory Technology, LLC · US

Inventors

Wayne Kinney · Emmett, US
Gurtej S. Sandhu · Boise, US

Key dates

Filing date	Jun 17, 2022
Grant date	Oct 17, 2023
Priority date	—
Expiry date	Jun 17, 2042

Classification

Technology area (CPC G)Physics
CPC primaryG11C2029/0411
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

This disclosure relates to selectively performing a read with increased accuracy, such as a self-reference read, from a memory. In one aspect, data is read from memory cells, such as magnetoresistive random access memory (MRAM) cells, of a memory array. In response to detecting a condition associated with reading from the memory cells, a self-reference read can be performed from at least one of the memory cells. For instance, the condition can indicate that data read from the memory cells is uncorrectable via decoding of error correction codes (ECC). Selectively performing self-reference reads can reduce power consumption and/or latency associated with reading from the memory compared to always performing self-reference reads.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.