Patent · US Active

Non-volatile memory with reverse state program

US11790994B2 · kind B2 · utility

0Cited by

5References

20Claims

0Family size

Assignee

Western Digital Technologies, Inc. · US

Inventors

Ming Wang · Shanghai, CN
Liang Li · Shanghai, CN
Jiahui Yuan · Fremont, US

Key dates

Filing date	Sep 22, 2021
Grant date	Oct 17, 2023
Priority date	—
Expiry date	Apr 16, 2042

Classification

Technology area (CPC G)Physics
CPC primaryG11C16/0483
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory system separately programs memory cells connected by a common word line to multiple sets of data states with the set of data states having higher threshold voltage data states being programmed before the set of data states having lower threshold voltage data states. The memory system also separately programs memory cells connected by an adjacent word line to the multiple sets of data states such that memory cells connected by the adjacent word line are programmed to higher data states after memory cells connected by the common word line are programmed to higher data states and prior to memory cells connected by the common word line are programmed to lower data states.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.